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![]() Date: 2007-07-11 13:40:15Electrical engineering MOSFET Channel length modulation Integrated circuits Transistor model CMOS Transistor NQS Compact Software Electronic engineering Electronic design Electronics | Add to Reading List |
![]() | Y:agination ey licationfiles c.dviDocID: R5DG - View Document |
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![]() | Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa*, T. Sekigawa*, T. Tsutsumi**, M. Hioki*, E. Suzuki*, and H. Koike* * Electroinformatics Group,DocID: NJY0 - View Document |
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![]() | 4H-SiC Trench MOSFETs with High Channel Mobility by using Tilted Trench Sidewalls Assistant Prof. Hiroshi YANO (NAIST) 1. Trench MOSFETDocID: C8q2 - View Document |