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Chemistry / TSMC / Semiconductors / Semiconductor device fabrication / Multigate device / Wafer / Silicon-germanium / International Electron Devices Meeting / 65 nanometer / Electronic engineering / Electronics / Integrated circuits
Date: 2012-10-23 18:11:08
Chemistry
TSMC
Semiconductors
Semiconductor device fabrication
Multigate device
Wafer
Silicon-germanium
International Electron Devices Meeting
65 nanometer
Electronic engineering
Electronics
Integrated circuits

1 TSMC Property The 450mm Transition

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