Back to Results
First PageMeta Content
Electronic design / Semiconductor devices / Digital electronics / CMOS / MOSFET / Integrated circuit / Transistor / Multigate device / 65 nanometer / Electronic engineering / Technology / Chemistry


Center for Low Energy Systems Technology (LEAST)
Add to Reading List

Document Date: 2015-04-02 10:17:31


Open Document

File Size: 1,33 MB

Share Result on Facebook

Company

Semiconductor Research Corporation / Two-Dimensional Layered Systems / Solid State Electronics / ACS / Raytheon / TwoDimensional Crystal Semiconductors / Teledyne Technologies / HP / DARPA / Vanadium / Low Power Electronics / /

Country

United States / /

Currency

USD / /

Facility

University of Notre Dame / University of California Berkeley / Tunnel Field-Effect Transistors / University of California San Diego / Stable Surface Charge Transfer Doping / University of California Santa Barbara / University of Texas Dallas / Tunnel Field Effect Transistors / Norwegian Institute of Technology / Purdue University / Introduction Tunnel / Illinois Institute of Technology / /

IndustryTerm

transition metal dichalcogenides / transistor technologies / transition metal dichalcogenide / research devices / steep devices / energy band diagram / applications requiring energy efficiency / atomistic device / Energy band diagrams / material systems / heterojunction technology / energy scavenging / /

Movie

A. I. / /

MusicGroup

Structure / Energy / Process / /

OperatingSystem

Fermi / /

Organization

University of California / Cornell / University of California Santa Barbara / University of Texas Dallas / Illinois Institute of Technology / Carnegie Mellon / Purdue University / Center for Low Energy Systems Technology / University of Notre Dame / Norwegian Institute of Technology / Department of Electrical Engineering / University of California San Diego / /

Person

W. S. Hwang / V / R. Salazar / Tom Kazior / Vijay Narayanan / Hao Lu / D. Esseni / Joerg Appenzeller / E. Kultursay / V / Marty Chumbes / A. Prakash / Suman Datta / A. Seabaugh / S. Vishwanath / Shahed Reza / Bob Wallace / H. Xu / V. Saripalli / V / D. Jena / J. Appenzeller / Alan Seabaugh / Ion Gating / H. G. Xing / /

Position

Universal analytic model / /

ProvinceOrState

Texas / South Carolina / /

Technology

0.3 10 Conclusions Silicon CMOS technology / microwave / field-effect transistor / III-V technology / Integrated Circuits / heterojunction technology / transistor technologies / simulation / /

URL

www.itrs.net/Links/2013ITRS/Home2013.htm / /

SocialTag