CS_ad_213x282mm_semiconductor_today_feb14.indd

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Date: 2014-03-31 17:35:38 MOSFET Electronic design Field-effect transistor Indium gallium arsenide Multigate device Transistor International Electron Devices Meeting Transconductance Nanowire Chemistry Electronic engineering Electrical engineering		CS_ad_213x282mm_semiconductor_today_feb14.indd Add to Reading List Source URL: www.semiconductor-today.com Download Document from Source Website File Size: 379,61 KB Share Document on Facebook

	Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well G.T. Liu, A. Stintz, H. Li, K.J. Malloy and L.F. Lester The lowest room-temperature threshold current d DocID: 1qC9E - View Document
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	LETTERS PUBLISHED ONLINE: 28 APRIL 2014 \| DOI: NMAT3946 Printing-based assembly of quadruple-junction four-terminal microscale solar cells and their use in high-efficiency modules DocID: 1qq5V - View Document
	High-performance GaInAs / GaAs quantum-dot lasers based on a single active layer. F.Schäfer,a) J.P.Reithmaier, and A. Forchel Technische Physik, Universität Würzburg, Am Hubland, DWürzburg , Germany (Received DocID: 1qmtu - View Document
	CINT PublicationsY. Sun, S. F. Cheng, G. Chen, R. F. Hicks, J. G. Cederberg, and R. M. Biefeld, “The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001),” J. Appl. Ph DocID: 1qe8S - View Document