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Oxides / Semiconductor device fabrication / Thin film deposition / Surface science / Desorption / Gallium(III) oxide / Suboxide / Ultra-high vacuum / Epitaxy


Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy Patrick Vogt and Oliver Bierwagen Citation: Applied Physics Letters 109, ); doi
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Document Date: 2016-08-08 18:15:09


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File Size: 891,30 KB

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