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Grown-in Defects of InSb Crystals: Models and Computation N. Vaidya ∗, H. Huang †, and D. Liang ‡ Department of Mathematics & Statistics, York University Toronto, Canada M3J 1P3. August 22, 2005
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Document Date: 2005-09-30 08:16:16

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File Size: 268,53 KB

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Country

Canada / /

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Facility

York University / /

IndustryTerm

temperature solution / gas temperature / free energy activation barrier / energy barrier / free energy barrier / ambient gas temperature / numerical algorithm / gas/crystal / formation energy / approximate solutions / activation energy / approximate solution / energy / /

Organization

York University Toronto / Department of Mathematics & Statistics / /

Person

GIV CI CV / /

Technology

semiconductor / numerical algorithm / heat transfer / recombination / /

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