<--- Back to Details
First PageDocument Content
Semiconductor devices / Intel / 45 nanometer / High-k dielectric / Microprocessor / Transistor / Multigate device / Atomic layer deposition / Electronic engineering / Electronics / Computer hardware
Date: 2014-01-13 18:23:07
Semiconductor devices
Intel
45 nanometer
High-k dielectric
Microprocessor
Transistor
Multigate device
Atomic layer deposition
Electronic engineering
Electronics
Computer hardware

Microsoft Word - Bio - Reza Arghavani LRCX

Add to Reading List

Source URL: microlab.berkeley.edu

Download Document from Source Website

File Size: 16,70 KB

Share Document on Facebook

Similar Documents

Hydrogen in high-k dielectric oxides modelled by muonium Rui Vilao - Univ. Coimbra Following the seminal work of Cox et al. (J. Phys. Cond. Matt) on high-k dielectric oxide muonics, we discuss the electro

DocID: 1o3zp - View Document

High-k dielectric / Electromagnetism / Electronics / Electrical engineering / Semiconductor device fabrication / Wafer / Ultraviolet

F R A U N H O F E R I N S T I T U T e for I nte g rate d S y ste m s an d De v i c e T e c hno l o g y I I S B 1

DocID: 19zCS - View Document

Condensed matter physics / Environmental chemistry / Materials science / Atomic physics / High-k dielectric / Transistors / Photoemission spectroscopy / Core electron / X-ray absorption spectroscopy / Physics / Chemistry / Science

PDF Document

DocID: 1954S - View Document

Electronic engineering / Transistors / High-k dielectric / Gate dielectric / Thermal oxidation / Semiconductor device fabrication / Silicon dioxide / Polycrystalline silicon / Negative bias temperature instability / Chemistry / Electromagnetism / Electronics

Photon Factory Activity Report 2005 #23Part BSurface and Interface 4C,6A,15C/2004G059 Residual Order in the Interfacial SiO2 Layer

DocID: 18WsR - View Document

Ceramic materials / Atomic physics / Molecular physics / Spectroscopy / X-ray photoelectron spectroscopy / Silicon dioxide / Oxide / High-k dielectric / Silicide / Chemistry / Matter / Anions

Photon Factory Activity Report 2009 #27 Part BSurface and Interface 18A/2008G186 Effect of oxygen coadsorption on titanium silicide formation on Si(001)

DocID: 18UZ5 - View Document