Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B - Metalorganic vapour phase epitaxy - Document - PDFSEARCH.IO

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	Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B Add to Reading List Document Date: 2013-10-31 05:07:25 Open Document File Size: 3,98 MB Share Result on Facebook

Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)BAdd to Reading List