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| First Page | Document Content | |
|---|---|---|
 Date: 2014-03-31 17:35:38MOSFET Electronic design Field-effect transistor Indium gallium arsenide Multigate device Transistor International Electron Devices Meeting Transconductance Nanowire Chemistry Electronic engineering Electrical engineering |
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CS_ad_213x282mm_semiconductor_today_feb14.indd | Leti_NR_UTSOI2_FINAL_11 03 15DocID: 1fHLd - View Document |
| G. Liu, W. Stillman, S. Rumyantsev, Q. Shao, M. Shur and A.A. Balandin, Low-noise top-gate graphene transistorsLow-noise top-gate graphene transistors G. Liu1, W. Stillman2, S. Rumyantsev2,3, Q. Shao1,4, M. ShurDocID: 1fGuC - View Document |
| Statistical variability shapes the future of CMOS Keynote talk from the CEO of GSS at the DATE VAMM Workshop The CEO of Gold Standard Simulations, Professor Asen Asenov, will deliver a keynote talk on variability in emerDocID: 1aK0w - View Document |
| Center for Low Energy Systems Technology (LEAST)DocID: 19KGs - View Document |
| KAUST Repository (Invited) Wavy Channel TFT Architecture for High Performance Oxide Based DisplaysDocID: 19CJ9 - View Document |