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Semiconductor device fabrication / Plasma processing / Plasma physics / Microtechnology / Measuring instruments / Plasma / Reactive-ion etching / Langmuir probe / Crystal oscillator / Etching / Microwave / Plasma diagnostics


Compensation for transient chamber wall condition using realtime plasma density feedback control in an inductively coupled plasma etcher Pete I. Klimecky, J. W. Grizzle, and Fred L. Terry, Jr. Department of Electrical En
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Document Date: 2016-04-25 13:15:14


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File Size: 774,06 KB

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