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SISPAD 2012, September 5-7, 2012, Denver, CO, USA Predictive TCAD Approach for the Analysis of Hot-Carrier-Stress Degradation in Integrated STI-based LDMOS Transistors Susanna Reggiani, Gaetano Barone,
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Document Date: 2013-02-12 08:39:11
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SISPAD 2012, September 5-7, 2012, Denver, CO, USA Predictive TCAD Approach for the Analysis of Hot-Carrier-Stress Degradation in Integrated STI-based LDMOS Transistors Susanna Reggiani, Gaetano Barone,