Mater.Phys.MechHETEROEPITAXIAL GROWTH OF InAs ON Si: THE NEW TYPE OF QUANTUM DOTS G.E. Cirlin1,2, N.K. Polyakov1,2, V.N. Petrov1, V.A. Egorov1, D.V. Denisov2, B.V. Volovik2, V.M. Ustinov2, Zh.I. Alferov2

Source URL: www.ipme.ru

Diameter-dependent conductance of InAs nanowires Marc Scheffler, Stevan Nadj-Perge, Leo P. Kouwenhoven, Magnus T. Borgström, and Erik P. A. M. Bakkers Citation: J. Appl. Phys. 106, ); doi:

Source URL: kouwenhovenlab.tudelft.nl

• Nanoelectronics
• Mesoscopic physics
• Electronics
• Materials science
• Nanowire
• Electromagnetism
• Ballistic conduction

Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B

Source URL: kouwenhovenlab.tudelft.nl

• Chemistry
• Matter
• Nanoelectronics
• Nanowire
• Indium antimonide
• Metalorganic vapour phase epitaxy
• Indium
• Drop
• Vaporliquidsolid method

APPLIED PHYSICS LETTERS 99, Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness Kuniharu Takei,1,2,3 Steven Chuang,1,2,3 Hui Fang,1,2,3 Rehan Kapadi

Source URL: nano.eecs.berkeley.edu

JOURNAL OF APPLIED PHYSICS 114, Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions Yuping Zeng,1,2 Chien-I Kuo,1 Rehan Kapadia,1,2 Ching-Yi Hsu,1 Ali Javey,1,2,a)

Source URL: nano.eecs.berkeley.edu

SEATS BREAK-UP AS PER NEW MECHANISM (FOR 2015 – 2017 SESSION) SUBJECTS(Group) 60% from C.U. Candidates passed inas per Merit) 40% from all others candidates (as per result of entrance)

Source URL: www.caluniv-ucsta.net

J12TE4 SERIES TE COOLED INAS DETECTORS Operating Instructions Typical Spectral Response

Source URL: www.judsontechnologies.com

SEATS BREAK-UP AS PER NEW MECHANISM (FOR 2015 – 2017 SESSION) SUBJECTS(Group) 60% from C.U. Candidates passed inas per Merit) 40% from all others candidates (as per result of entrance)

Source URL: www.caluniv-ucsta.net

SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analysis of tunneling characteristics through hetero interface of InAs/Si nanowire tunneling field effect transistors Yasuaki Miyoshi, Matsuto Ogawa,

Source URL: in4.iue.tuwien.ac.at

APPLIED PHYSICS LETTERS 102, High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics Kuniharu Takei,1,2,3 Rehan Kapadia,1,2,3 Hui Fang,1,2,3 E. Plis,4 Sanjay Krishn

Source URL: nano.eecs.berkeley.edu