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Annealing / Silicide / Photoemission spectroscopy / Chemistry / Physics / Electrical engineering / Electronic engineering / High-k dielectric / Transistors


Surface and Interface 2C/2002S2-002 Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate insulator on Si
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Document Date: 2010-01-05 10:30:04

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File Size: 69,98 KB

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