Hall effects / 2 / A. V. Kalameitsev Institute of Semiconductor Physics / /
IndustryTerm
carrier concentration / metal gate / metal interdigital transducer / calculated local carrier concentration / 2D systems / 2D electron systems / 3D systems / carrier density / stationary energy / short device / hybrid systems / 3D electron gas / 2D electron gas / numerical solution / energy / /
Organization
Russian Academy of Sciences / Institute of Semiconductor Physics / Center for NanoScience / U.S. Securities and Exchange Commission / Germany K.-H. Hoffmann and N. Botkin Center / Russian Foundation for Basic Research / /
Person
R. N. Sacks / R. D. Caroll / C. Churchill / E. J. Branciforte / D. R. Mace / V / T. C. Eschrich / D. E. Cullen / S. W. Merritt / /
Position
N. Butcher / /
Product
B 47 / A1 / /
ProvinceOrState
P. N. / New York / /
Technology
semiconductor / semiconductors / dielectric / ISP / radio frequency / /