Integrated Electronics / Nano-Device Laboratory / Electronic Devices / Agilent / Lawrence Livermore National Laboratory / /
Country
Russia / United States / / /
Facility
Rensselaer Polytechnic Institute / Ioffe Physico-Technical Institute / University of California / Bourns College of Engineering / /
IndustryTerm
typical device / nano-devices / graphene applications / conventional devices / fabrication technology / metal contacts / back-gate graphene devices / metal gates / electronics / graphene devices / selected devices / nanoscale systems / electronic systems / /
Organization
University of California / Rensselaer Polytechnic Institute / Bourns College of Engineering / Russian Academy of Sciences / St. Petersburg / Center on Functional Engineered Nano Architectonics / Center for Micro / Center for Integrated Electronics / Ioffe Physico-Technical Institute / Interconnect Focus Center / Department of Electrical / Computer and Systems Engineering / /
Position
Corresponding author / /
ProvinceOrState
California / New York / /
PublishedMedium
Nature Nanotechnology / /
Technology
semiconductor / dielectric / spectroscopy / lithography / fabrication technology / recombination / verified using the micro-Raman spectroscopy / /
G. Liu, W. Stillman, S. Rumyantsev, Q. Shao, M. Shur and A.A. Balandin, Low-noise top-gate graphene transistorsLow-noise top-gate graphene transistors G. Liu1, W. Stillman2, S. Rumyantsev2,3, Q. Shao1,4, M. Shur