IEEE JOURN.4L OF SOLID-ST.iTE CIRCUITS, VOL[removed]

First Page		Document Content
Date: 2009-01-23 22:37:34 Semiconductor devices Electronic design Integrated circuits Digital electronics Logic families MOSFET Self-aligned gate Threshold voltage Field-effect transistor Electronic engineering Electrical engineering Electromagnetism		IEEE JOURN.4L OF SOLID-ST.iTE CIRCUITS, VOL[removed] Add to Reading List Source URL: www.eng.auburn.edu Download Document from Source Website File Size: 1,57 MB Share Document on Facebook

	SAMWIN SW50N10 N-channel TO-220 MOSFET Features DocID: 1rjYK - View Document
	APPLIED PHYSICS LETTERS 89, 143502 共2006兲 Pressure sensing by flexible, organic, field effect transistors I. Manunza, A. Sulis, and A. Bonfiglioa兲 CNISM; Department of Electric and Electronic Engineering, Universi DocID: 1rjv8 - View Document
	Electrically erasable non-volatile semiconductor memory DocID: 1riBj - View Document
	APPLIED PHYSICS LETTERS 88, 023506 共2006兲 Soft lithography fabrication of all-organic bottom-contact and top-contact field effect transistors P. Cosseddu and A. Bonfiglio INFM-University of Cagliari, Department of E DocID: 1r7eH - View Document