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Chemical elements / Crystallographic defects / Deformation / Elasticity / Dislocation / Annealing / Yield / Czochralski process / Semiconductor / Chemistry / Materials science / Matter


Journal of The Electrochemical Society, 152 共6兲 G460-G467 共2005兲 G460[removed]152共6兲/G460/8/$7.00 © The Electrochemical Society, Inc.
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Document Date: 2007-07-29 11:21:23


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City

London / Novara / Oxford / /

Company

Pergamon Press / J. R. Patel L. C. / Topsil Semiconductor Materials A/S / United Kingdom MEMC Electronic Materials SpA / Electrochemical Society Inc. / /

Country

Italy / /

Currency

USD / /

/

Facility

University of Oxford / /

IndustryTerm

oxygen dimer binding energy / activation energy equal / particular processing step / actual device / oxygen binding energy / semiconductor device / maximum interaction energy / device processing / chemical etching / interaction energy / activation energy / greater binding energy / energy / /

Organization

Electrochemical Society / Department of Materials / University of Oxford / /

Person

S. Öberg / Prog / R. Jones / B. Bech Nielsen / F. Berg Rasmussen / J. C. Mikkelsen / Jr. / /

Position

heat-treatments representative / /

Technology

semiconductor / spectroscopy / simulation / integrated circuits / /

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