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Electronics / Z-RAM / 1T-SRAM / Dynamic random-access memory / EDRAM / Twin Transistor RAM / Multigate device / Random-access memory / Flash memory / Computer memory / Computer hardware / Computing


Document Date: 2006-12-11 05:48:29

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Company

Innovative Silicon / Micron Technology / TSMC / MoSys / Freescale Semiconductor / Intel / /

Facility

Belgium’s Interuniversity Microelectronics Center / /

IndustryTerm

technology license / manufacturing practices / produced multimegabit test chips / embedded-memory technology / memory technologies / multicore processors / graphics processors / manufacturing steps / memory technology / less energy / test chips / memory chips / server processors / /

OperatingSystem

L3 / /

Organization

Belgium’s Interuniversity Microelectronics Center / Semiconductor Industry Association / /

Person

Mark-Eric Jones / Serguei Okhonin / Pierre Fazan / /

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Position

CTO / researcher / engineer / chief scientist / CEO / president and CEO / co-founder / /

PublishedMedium

MICROPROCESSOR REPORT / /

Technology

memory technologies / RAM / graphics processors / FinFET technology / produced multimegabit test chips / SOI technology / server processors / same processor / Z-RAM technology / multicore processors / SRAM / 1T-SRAM Technology / memory chips / bulk CMOS chip / embedded-memory technology / memory technology / Z-RAM test chips / Flash memory / SOI chip / dielectric / test chips / /

URL

www.MPRonline.com / www.innovativesilicon.com / /

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