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Semiconductor devices / Light-emitting diodes / Post-transition metals / Gallium / Indium gallium nitride / Indium gallium arsenide / Indium / Metalorganic vapour phase epitaxy / Band gap / Chemistry / Phosphides / Compound semiconductors
Date: 2013-12-23 17:03:01
Semiconductor devices
Light-emitting diodes
Post-transition metals
Gallium
Indium gallium nitride
Indium gallium arsenide
Indium
Metalorganic vapour phase epitaxy
Band gap
Chemistry
Phosphides
Compound semiconductors

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