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Solid phase epitaxy of ultra-shallow Sn implanted Si observed using highresolution Rutherford backscattering spectrometry T. K. Chan, F. Fang, A. Markwitz, and T. Osipowicz Citation: Appl. Phys. Lett. 101, );
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Document Date: 2013-02-01 05:11:43
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Solid phase epitaxy of ultra-shallow Sn implanted Si observed using highresolution Rutherford backscattering spectrometry T. K. Chan, F. Fang, A. Markwitz, and T. Osipowicz Citation: Appl. Phys. Lett. 101, );