Journal of Undergraduate Research 4, Selective Atomic Layer Deposition (SALD) of Titanium Dioxide on Silicon and Copper Patterned Substrates K. Overhage Department of Chemical Engineering, Purdue University, I

First Page		Document Content
Date: 2011-03-09 12:29:52 Semiconductor device fabrication Chemistry Matter Manufacturing Thin film deposition Atomic layer deposition Titanium dioxide Chemical vapor deposition Diffusion barrier Thin film Titanium nitride Crystalline silicon		Journal of Undergraduate Research 4, Selective Atomic Layer Deposition (SALD) of Titanium Dioxide on Silicon and Copper Patterned Substrates K. Overhage Department of Chemical Engineering, Purdue University, I Add to Reading List Source URL: jur.phy.uic.edu Download Document from Source Website File Size: 454,10 KB Share Document on Facebook

	Journal of Undergraduate Research 4, Selective Atomic Layer Deposition (SALD) of Titanium Dioxide on Silicon and Copper Patterned Substrates K. Overhage Department of Chemical Engineering, Purdue University, I DocID: 1qbWG - View Document
	MATEC Web of Conferences 30, DOI: m atec conf 0 5 C Owned by the authors, published by EDP Sciences, 2015 Effect of Silicon Nitride Incorporation on Microstructure and Hardne DocID: 1puXB - View Document
	http://labmat.prz.edu.pl Advanced Technologies for Aerospace Industry Paweł Rokicki, DocID: 1pmbe - View Document
	MATEC Web of Conferences 39 , ) DOI: m atecconf1 0 C Owned by the authors, published by EDP Sciences, 2016 Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the DocID: 1p7X8 - View Document
	FACULTY: FIELD OF STUDY: COURSE TITLE: LECTURER’S NAME: E-MAIL ADDRESS OF THE LECTURER: ECTS POINTS FOR THE COURSE: DocID: 1oD9t - View Document