21 January[removed]Volume 102 Number 3 Applied Physics Letters

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Date: 2013-02-07 19:44:45 Semiconductor devices Compound semiconductors Inorganic compounds Multijunction photovoltaic cell Indium gallium arsenide Gallium arsenide Band gap Heterojunction Indium gallium phosphide Chemistry Solar cells Energy conversion		21 January[removed]Volume 102 Number 3 Applied Physics Letters Add to Reading List Source URL: daedalus.caltech.edu Download Document from Source Website File Size: 2,91 MB Share Document on Facebook

	LETTERS PUBLISHED ONLINE: 28 APRIL 2014 \| DOI: NMAT3946 Printing-based assembly of quadruple-junction four-terminal microscale solar cells and their use in high-efficiency modules DocID: 1qq5V - View Document
	www.advhealthmat.de www.MaterialsViews.com FULL PAPER Immunologic and Tissue Biocompatibility of Flexible/ DocID: 1p1m0 - View Document
	Towards vertical III-V nanowire devices on silicon Erik P.A.M. Bakkers, Magnus T. Borgstrom, Wim van den Einden, Maarten van Weert, Ethan D. Minot, Freek Kelkensberg, Maarten van Kouwen, Jorden A. van Dam, Leo P. Kouwen DocID: 1neNR - View Document
	NREL, CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell Scientists set a new world record for converting non-concentrated sunlight into electricity using a dual-junction III-V/Si solar cell. DocID: 1mn2H - View Document
	LED DOT MATRIX BL-M23A881XXX Features: Ø 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR DocID: 1arAb - View Document