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Nitrides / Superhard materials / Materials science / Thin film deposition / High-k dielectric / Transistors / Silicide / Titanium nitride / Atomic layer deposition / Chemistry / Semiconductor device fabrication / Matter


Photon Factory Activity Report 2007 #25 Part BSurface and Interface 2C/2005S2-002 Hf-silicidation reactions due to vacuum annealing for a-Si/ HfSiO(N)/ Si gate
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Document Date: 2010-01-05 10:34:50

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City

Tokyo / /

Company

Selete Co. / /

Country

Japan / /

/

Facility

The University of Tokyo / /

IndustryTerm

chemical reactions / high-k films / chemical bonding / chemical kinetics works / chemical bonding state / /

Organization

University of Tokyo / Tokyo / Semiconductor Technology Academic Research Center / Technology / Japan Science and Technology Agency / Univ-of-Tokyo Synchrotron Radiation Research Organization / Department of Applied Chemistry / /

Person

Guo Lin / /

RadioStation

2 Core / /

Technology

crystallization / spectroscopy / radiation / thermodynamics / dielectric / 4 Semiconductor Technology / /

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