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Electronic design / Integrated circuits / Logic families / MOSFET / Multigate device / RF MEMS / CMOS / 22 nanometer / Semiconductor device fabrication / Electrical engineering / Electronic engineering / Electromagnetism


SHORT COURSE 22nm CMOS Technology Sunday, December 14, 9:00 a.m. – 5:30 p.m.
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Document Date: 2013-02-26 10:28:33

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City

Si / /

Company

IBM / Fujitsu Laboratories Ltd. / Samsung Electronics Co. Ltd. / ICs / Sharp Corporation / Toshiba America Electronic Components Inc. / TSMC / Analog Devices / Freescale Semiconductor Inc. / analog/RF / Texas Instruments Deutschland GmbH / 3M Company / Non-Volatile Memory Technologies / Fujitsu Microelectronics Limited / Intel Corporation / Semiconductor Leading Edge Technologies Inc. / David Redinger / Diodes / Texas Instruments / Hitachi Ltd. / Applied Materials / Toshiba Corporation / Shimizu / NXP Semiconductors / Advanced Micro Devices / /

Facility

Samsung Advanced Institute of Technology / Samsung Advanced Institute of Technology The / National University of Singapore / Tokyo Institute / University of Texas Dallas We / T. Mine / Delft University of Technology Why CMOS Imaging Fundamentals / p.m. Continental Ballroom / Max Planck Institute / The University of Tokyo We / Institute of Microelectronics We / Samsung Advanced Institute of Technology We / University of California / /

IndustryTerm

process technologies / technology solutions / organic electronics / 22nm technology node / entertainment systems / 22nm node 22nm node solutions / high electron carrier mobility / power devices / sheet-type device / power technologies / technology choices / 45nm high performance applications / signal processing / technology implementation / imaging / early technology definition phase / energy / metal / 45nm node devices / on-chip real estate / power management / process technology / technology limitations / technology scaling / enhancement technologies / electronics / mobile communication devices / manufacturing / back-end technology metrics / computing / back-end technology elements / Manufacturing complexity management / time device / large subband energy difference / technology evolution / /

MusicGroup

High Frequency / /

Organization

Samsung Advanced Institute / National University of Singapore / University of Tokyo / Princeton University / University of California / Berkeley / Samsung Advanced Institute of Technology We / Delft University of Technology / Purdue University / Stanford University / University of Tokyo We / Tokyo Institute of Technology / University of Texas / /

Person

Ralf Brederlow / Jeffrey Gambino / Stefan Lai / George Liu / Kristin De Meyer / Luigi Colombo / C.S. Lee / Thomas Lee / Hiroshi Iwai / N. Goyal / V / Vivek Subramanian / Albert Theuwissen / Leo Lorenz / Gennadi Bersuker / Peter Fromherz / Aaron Thean / /

Position

General / Chair / Representative / /

Product

Y2O3 / La2O3 / MgO2 layers / /

ProgrammingLanguage

RC / DC / /

ProvinceOrState

California / /

Technology

Broadband / field scanner performance BEOL Technology / Si-based CMOS technologies / lithography / SRAM / nonvolatile memory technologies / process technology / nonvolatile memory / Alternative channel materials SCE Enhancement Physics/technology / CMP / nonvolatile memory technology / related technologies / 22nm Technology / CMOS technology / MEMS / amorphous Ga2O3In2O3-ZnO TFT technology / OLED / semiconductors / Flash memory / MtM technologies / System-on-Chip / 22nm Raised S/D technologies / enabling process technologies / dielectric / digital cameras / key enabling power technologies / 22 nm Technology / SHORT COURSE 22nm CMOS Technology / Simulation / 22nm Conventional enhancement technologies / PDA / be discussed including immersion lithography / /

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